The report analyzes and presents an overview of High Electron Mobility Transistor (HEMT) market worldwide. "HEMT (High Electron Mobility Transistor) is a field effect transistor that includes a junction between 2 materials featuring disparate band gaps. HEMT is also referred to as HFET (HeterostructureField Effect Transistor) or HJFET (Heterojunction Field Effect Transistor) and pertain to a group of devices that are based on 2-D electrongas. In addition, HEMT is also known as TEGFET (Two-Dimensional Electron Gas Effect Transistor) or SDFET (Selectively Doped Field Effect Transistor) or MODFET (Modulation Doped Field Effect Transistor). HEMTs are primarily being made with III-V group compounds due to good lattice matching as well as low effective masses offered by III-V compounds. HEMTs offer a suitable alternative, particularly in high frequency applications. HEMT is regarded as vital for applications including mobile radio communications and satellite broadcasting within the millimeter-wave and microwave communications fields."
The report also provides a review of working process, market prospects and R&D initiatives along with strategic industry activities of major companies worldwide. In addition, 26 companies operating in the High Electron Mobility Transistor (HEMT) arena worldwide including Avago Technologies Ltd., Cree Inc., Infineon Technologies AG, Microsemi Corporation, Mitsubishi Electric Corporation, Nitronex LLC, Sumitomo Electric Industries Ltd., Toshiba America Electronic Components Inc., Transphorm Inc., TriQuint Semiconductor Inc., and others are profiled.